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Author Topic: 2018/2019 WAEC WASSCE PHYSICS Questions And Answer Expo/Runs  (Read 3631 times)

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Offline JEFFREY96

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2018/2019 WAEC WASSCE PHYSICS Questions And Answer Expo/Runs
« on: April 20, 2018, 08:52:23 am »
Real 2018/2019 WAEC WASSCE PHYSICS Real Questions And Answers  Expo Runs Runz

===================
Tuesday, 10th April, 2018

Physics 2 (Essay) – 09:30 a.m. – 11.00 a.m.

Physics 1 (Objective) – 11:00 a.m. – 12:15 p.m.
====================

Like CLICK HERE for the QUESTIONS & ANSWERS.

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    Offline Anokye Frederick

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    Pls the answers and objectives
    Jeffrey pls send it early for us time is not on our side thanks.

    Offline Anokye Frederick

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    Pls we are waiting ooo
    Time is going

    Offline JEFFREY96

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    PHYSICS OBJ:

    1-10: CAABACBADB
    11-20:ACCCDABDCC
    21-30:DBADCABCAB
    31-40:CCBBCCBABD
    41-50:BDCDBABBDC

    *1a*
    Strain is
    force (a part of one's body or oneself) to make an unusually great effort.

    3)
    -Diamagnetic material
    -Paramagnetic material
    -Ferromagnetic

    10a) Diffraction refers to various phenomena that occur when a wave encounters an obstacle or a slit. It is defined as the bending of light around the corners of an obstacle or aperture into the region of geometrical shadow of the obstacle.

    2 )
    i ) quantity of charge
    ii) nature of element
    iii ) Time

    *10a*
    the process by which a beam of light or other system of waves is spread out as a result of passing through a narrow aperture or across an edge, typically accompanied by interference between the wave forms produced.


    *10bi*
    the angle of incidence beyond which rays of light passing through a denser medium to the surface of a less dense medium are no longer refracted but totally reflected.

    12a)
     binding energy is the minimum energy that would be required to disassemble the nucleus of an atom into its component parts. These component parnucleon seutrons and protons, which are collectively called nucleons
    7(a). LASER stands for Light Amplification by Stimulated Emission of Radiation.
     
        (b). A laser is a device that emits a beam of coherent light through an optical amplification process.

    10a) Diffraction refers to various phenomena that occur when a wave encounters an obstacle or a slit. It is defined as the bending of light around the corners of an obstacle or aperture into the region of geometrical shadow of the obstacle.
    12a)
     binding energy is the minimum energy that would be required to disassemble the nucleus of an atom into its component parts. These component parts are neutrons and protons, which are collectively called nucleons
    4a)An intrinsic semiconductor, also called an undoped semiconductoror i-type semiconductor, is a pure semiconductor without any significant dopant species present. The number of charge carriers is therefore determined by the properties of the material itself instead of the amount of impurities.
    10b)
    Critical angle: the angle of incidence beyond which rays of light passing through a denser medium to the surface of a less dense medium are no longer refracted but totally reflected.

    (2)
    Material used for making optical fibers
    (i) Silicon Dioxide
    (ii) Silica Powder
    (iii) Germanium Tetrachloride



    (3)
    (i) Ferromagnetic material
    (ii) Diamgentic  material
    (iii) Pamangentic material

    10a) Diffraction refers to various phenomena that occur when a wave encounters an obstacle or a slit. It is defined as the bending of light around the corners of an obstacle or aperture into the region of geometrical shadow of the obstacle.

    12a)
     binding energy is the minimum energy that would be required to disassemble the nucleus of an atom into its component parts. These component parts are neutrons and protons, which are collectively called nucleons
    4a)An intrinsic semiconductor, also called an undoped semiconductoror i-type semiconductor, is a pure semiconductor without any significant dopant species present. The number of charge carriers is therefore determined by the properties of the material itself instead of the amount of impurities.

    10b)
    Critical angle: the angle of incidence beyond which rays of light passing through a denser medium to the surface of a less dense medium are no longer refracted but totally reflected.
       
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    Offline Anokye Frederick

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    Thanks
    Pls the objectives

    Offline handilanrio

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    --------------------------------
    (2)
    Material used for making optical fibers
    (i) Silicon Dioxide
    (ii) Silica Powder
    (iii) Germanium Tetrachloride
    --------------------------------
    (3)
    (i) Ferromagnetic material
    (ii) Diamgentic  material
    (iii) Pamangentic material
    --------------------------------
    4a)An intrinsic semiconductor, also called an undoped semiconductoror i-type semiconductor, is a pure semiconductor without any significant dopant species present. The number of charge carriers is therefore determined by the properties of the material itself instead of the amount of impurities.
    ------------------------------------------------
    5 )
    Range = u ² Sin2 tita / g
    At maximum range
    Sin2 tita = 1
    2 tita = sin ^ - 1 ( 1 )
    2 tita = 90dgrees
    Tita = 90/ 2 = 45degree
    Maximum height reached = u ² sin ² tita / 2 g
    = u ² ( sin 45) ² / 2 g
    = 200² ( sin 45) ² / 2 ( 10)
    = 40000 ( 1 / √2 ) 2 / 20
    = 40000 ( 1 / 2 ) / 20
    = 20000 / 20
    = 1000metres .
    ------------------------------------------------
    6 )
    Given constant = 2 . 9 × 10^ - 3 mk
    Temperature = 57degreeC = ( 57+ 273 ) k = 330 k
    Using landamaxT = constant
    landamaxT330 = 2 . 9 × 10^ - 3
    landamax = 2 . 9 × 10^ - 3 / 330
    landamax = 8 . 788 × 10^ - 6 m
    The speed of electromagnetic wave, v = 3 × 10^ 8 m / s
    Using V = f landa
    f = v / landa
    = 3 × 10^ 8 / 8 . 788 × 10^ - 6
    = 3 . 4 × 10^ 13Hz
    ----------------------------------------------------------------
    7(a). LASER stands for Light Amplification by Stimulated Emission of Radiation.
     
        (b). A laser is a device that emits a beam of coherent light through an optical amplification process.
    --------------------------------
    10a) Diffraction refers to various phenomena that occur when a wave encounters an obstacle or a slit. It is defined as the bending of light around the corners of an obstacle or aperture into the region of geometrical shadow of the obstacle.

    10b)
    Critical angle: the angle of incidence beyond which rays of light passing through a denser medium to the surface of a less dense medium are no longer refracted but totally reflected.

    --------------------------------
    12a)
     binding energy is the minimum energy that would be required to disassemble the nucleus of an atom into its component parts. These component parts are neutrons and protons, which are collectively called nucleons

    Offline handilanrio

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    4 b )
    The P Type semiconductor is a type of semiconductor that
    carries a positive charge , while the N type semiconductor carries a
    negative charge .
    --------------------------------------------------------------------------------
    (12a) This is defined as the amount of energy that must be supplied to a nucleus to completely separate it's nuclear particles (nucleons)

    (12b)
    (i) They have short wavelength and high frequency.
    (ii) They are highly penetrating.
    (iii) They travel in straight lines.
    (iv) They don't require material medium for their propagation.

    (12c)
    -It is used in production of electricity.
    -It is used to study and detect charges in genetic engineering.
    -It is used in agriculture.
    -It is used in treatment of cancer.

    (12di)
    E = hf-hfo
    but f = v/landa
    E= v/landa.h - wo
    Where wo = hfo = work function
    f= frequency
    landa = wavelength
    Hence
    hf = hfo - E
    f = hfo - E/h
    f = wo - E/h
    Recall; that v = f landa
    Therefore f = v/landa = 3×10^8/4.5×10-7
    =3/4.5 × 10^8+7
    =6.6×10^14Hz
    f = 6.6×10^14Hz

    (12dii)
    E = hf
    =6.6×10^-34 × 6.6×10^14Hz
    =43.56×10^-20J

    (12diii)
    Energy of the photoelectron E = hf - vo
    =Energy of incident electron - work function
    =4.356×10^-19J - 3.0×10^-19J
    =1.356×10^-19J

    Offline Anokye Frederick

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    Pls the objectives

     

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